Dézsi, István
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Professor emeritus |
Phone: +36 1 392-27-57 Fax: +36 1 395 9151 |
| Kossuth Lajos University, Faculty of Science, (Hungary)
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| Scientist at the Central Research Institute for Physics of the Hungarian Academy of Sciences |
| Head of the Nuclear Physics Department |
| Scientific adviser, Professor emeritus |
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Invitations as visiting professor
| University of Louisville, Lousville, Ky. USA |
| Katholieke Universiteit Leuven, Belgium |
| Universität des Saarlandes, Saarbrücken, Germany |
| Award of the Academy (Hungarian Academy of Sciences) |
| Schmid Rezsö Price (Roland Eötvös Physical Society, Hungary), |
| Ipolyi Arnold Price (Hungarian National Science Foundation), |
| Main Price of Physics (Hungarian Academy of Science), |
| Institute Price (Research Institute for Technical Physics and Materials Science). |
| Laureatus Academiae, József Eötvös lauretate (Hungarian Academy of Science) |
Membership
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- Research in the early part of the career was made in nuclear physics, then the application of nuclear methods in solid-state physics and in chemistry. The methods used were the Mössbauer effect, positron annihilation, perturbed angular correlation, Rutherford backscattering and thermal analysis. The phases and their thermal evolution formed in frozen solutions were determined and was among the first to discover the structural changes of high spin - low spin transition in organometallic compounds, determined the magnetic structure of numerous solids and began very early the study of superparamagnetic structure. The nature of a new phase transformation in numerous solids. Important structural data were obtained for FeCO3, LiNbO3, for organometallic compounds and alloys were discovered and clarified. Mössbauer studies on the corrosion products of iron were initiated.
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In the field of positron annihilation, The formation of bound states of positron in various substances (ionic crystals, alloys) were investigated.
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In the past fifteen years, studies on amorphous and ion-implanted structures were performed. For the latter, the bound states of numerous implanted impurities in damaged and annealed semiconductor and insulator lattices and in clusters were determined.
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In the last years, intensive research was made in the field of thin layers, formation and determination of electronic structures of ultra thin layer systems.
The results of the research activities have been published in 254 papers.
At numerous international conferences, invited talks and member (also chairman) of various organizing committees.
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